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Amazon.com: Locking and Security Codes: A Handbook and Reliable Cryptographer: The Sheikh Crypter 1:508555858901. Field of the Invention
The present invention relates to a method of manufacture in the case of which a method of manufacture of a semiconductor device in which, by making a formation of an insulation film on an electrode used for electrically connecting between the electrodes of laminated substrates, an insulation film is formed under a structure of electrodes or wirings having a structure of a laminated member, a structure where both the substrates have been laminated, or the like is carried out.
2. Description of the Related Art
In recent years, a large-capacity memory having a memory capacity of several hundreds MB (mega-bytes) has been required and manufacturing of such a large-capacity memory by a large-scale chip has been desired. In order to realize such a large-capacity memory, the size of a chip of a semiconductor device (semiconductor chip) needs to be made small.
One of the methods of manufacturing a conventional large-capacity semiconductor memory is a method of forming a film of silicon dioxide on one substrate (bonding substrate) at the time of bonding the substrate to a mounting substrate and the mounting substrate is then divided into a plurality of chips. However, since it is difficult to form a film of silicon dioxide on the bonding substrate by vacuum growth (vacuum deposition) using a metal such as tungsten as a material thereof, usually a wafer (silicon wafer) formed into a semiconductor chip is first bonded to a mounting substrate and then, the wafer is diced into a plurality of chips (dicing step). The surface of the chip that is obtained by dicing is charged with static electricity by the friction at the time of dicing and the static electricity causes an operation failure of a driving circuit formed on the chip surface. Therefore, the chip is electrically insulated from the mounting substrate by electrically isolating the chip
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